ARLINGTON, Va. — Intel Corp. Tuesday (Oct. 14) introduced a multichip package with an extra NOR flash dedicated to data storage in next-generation wireless handsets.
The addition of NOR storage capacity escalates Intel's head-on competition with rival NAND flash memory vdndors, which also are targeting wireless data storage functions.
The package can include up to four chips using a combination of NOR flash, SRAM, pseudo SRAM or SDRAM for a memory density of up to 1 Gbit. It is the first time Intel has used SDRAM in its MCP. Intel acquires the SDRAM and SRAM from outside suppliers.
The package, known as a StrataFlash Wireless Memory System, was unveiled at the Intel Developer Forum in Taipei, Taiwan, and is sampling now with production volumes starting in February 2004. The package size is 8mm x 11mm.
Scott Dunagan, senior flash product marketing manager, said the new device can include two 256-Mbit NOR flash die, one for traditional code execution and a second for storage of images, audio and video. Up to now Intel's multichip packages have included only a single NOR flash for both functions.
Dunagan said next year Intel will will use two 512-Mbit NOR Strataflash multilevel cell die in the package.
Dunagan said the StrataFlash Wireless Memory System package will use 256-Mbit NOR flash made with 0.13-micron processing. He said the device is targeted at the high end of the wireless handset market, "with the majority of handset market still using a single NOR flash for both code execution and data storage." http://www.eetimes.com/semi/news/OEG20031014S0024